fdj5555
Fairchild Semiconductor's High Power Bipolar Junction Transistors Deliver High Efficiency for Electronic Ballast, Power Sup
Submitted by Ionela on Wed, 04/02/2008 - 07:42.
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The FJD5555 and FJD5553's Saturation Voltage is the Lowest in the Industry San Jose, California April 1, 2008 Fairchild Semiconductor's (NYSE: FCS) 3A and 5A bipolar junction transistors (BJT) contribute to energy-savings in electronic ballast, power supply and industrial designs due to their ultra-fast switching speeds and low saturation voltage. The FJD5555's saturation voltage is as low as 0.5V and the FJD5553 is as low as 0.23V which is 50 percent lower than industry alternatives. The combination of low saturation voltage and high switching speed positively contributes to overall efficiency. Both the FDJ5555 and the FDJ5553 feature a high breakdown voltage (1050V), which is particularly important for lighting applications that need a wide safe operating area. These transistors are packaged in ultra-compact DPAK packaging (64mm2) to conserve space in electronic ballast and power supply designs. |
