figure of merit
New 30-V TrenchFET Power MOSFET with Industry-Best Maximum 2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage is First De
Submitted by Ionela on Fri, 04/18/2008 - 07:18.
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Device Also Features Industry-Best On-Resistance Times Gate Charge FOM of 98 Milliohms-Nanocoulombs MALVERN, Pa. — Mar. 26, 2008 — The first device in a new third-generation TrenchFET® power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge was released today by Vishay Intertechnology, Inc. (NYSE: VSH). The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS = 30V, VGS = 20 V device in an SO-8 footprint. |
