ldmos
NXP Delivers Breakthrough Power Efficiency on LDMOS Base Stations
Submitted by Ionela on Thu, 05/15/2008 - 07:42.
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Optimized for high power use and Doherty applications NXP Semiconductors, the independent semiconductor company founded by Philips, launched the BLC7G22L(S)-130 base station power transistor the first of its products to feature NXP's industry-leading Gen7 LDMOS technology optimized for high power use and Doherty amplifier applications |
Freescale 450 watt RF power transistor offers unprecedented peak power for UHF broadcast applications
Submitted by Ionela on Mon, 04/14/2008 - 17:56.
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50 V LDMOS device designed to enable significant system-level power and cost savings for TV transmitters LAS VEGAS (National Association of Broadcasters Show) April 14, 2008 Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions. |
