mosfet

Renesas Technology Europe announced the release of the RQA0010 and RQA0014 high-frequency power MOSFETs that achieve the industry's highest efficiency class *1 and the high reliability of ESD immunity level 4 *2. These devices are designed for use in the transmitter power amplifier of handheld wireless equipment.

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Maxim Integrated Products introduces the MAX17061 8-string white-LED (WLED) driver with an integrated MOSFET switch. This device utilizes an internal switch, current-mode, step-up controller to drive the LED array, which can be configured for up to eight parallel strings with ten LEDs per string. To ensure even LED brightness, each string employs a current source that achieves ±1.5% current-balance accuracy between strings. Additionally, the MAX17061 generates a DPWM signal for accurate WLED dimming control. The DPWM's signal is controlled through a PWM interface, an SMBus™-compatible interface, or both.

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Vishay Intertechnology today announced the release of 15 new power MOSFETS in a PowerPAK SC-70 package measuring 2 mm by 2 mm with a low 0.8-mm profile. The new offering includes a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The devices feature voltage ranges between 8 V and 30 V with extremely low on-resistance values down to 0.011 Ω at 4.5 V.

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At the PCIM 2008 Exhibition and Congress in Nuremberg, Infineon Technologies AG announced availability of its OptiMOS3 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages, allowing it to offer the world's lowest R DS(on) (on-state resistance) in leadless packages at those breakdown voltages. Compared to standard TO (Transistor Outline) packages, the SuperSO8 products increase power density by as much as 50 percent, especially in synchronous rectification applications in server SMPSs (switched-mode power supplies).

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Geneva, May 06,2008 - STMicroelectronics (NYSE: STM), a world leader in semiconductor devices for power applications, has announced a new family of fast-recovery MOSFETs that combine enhanced switching performance with on-resistance improved by more than 18% over existing devices, to meet the needs of efficiency-focused applications, including renewable-energy controllers.

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Zetex Semiconductors has announced a series of bipolar gate drivers for switching MOSFETs and IGBTs in power supplies and motor drives. Capable of sinking currents up to 9A, the low cost ZXGD3000 series enables faster charging and discharging of gate capacitances than is possible with gate driver ICs, resulting in more rapid switching times and greater circuit efficiency.

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Device Also Features Industry-Best On-Resistance Times Gate Charge FOM of 98 Milliohms-Nanocoulombs

MALVERN, Pa. — Mar. 26, 2008 — The first device in a new third-generation TrenchFET® power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge was released today by Vishay Intertechnology, Inc. (NYSE: VSH).

The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS = 30V, VGS = 20 V device in an SO-8 footprint.

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NTUD312x devices offer a 30 percent smaller mount area than comparable MOSFET solutions offered in single SOT-723 package and 60 percent smaller than SOT-563 MOSFETs

PHOENIX, Ariz. April 16, 2008 - ON Semiconductor (Nasdaq: ONNN), a global leader in efficient power solutions, introduced three new dual MOSFETs offered in an ultra-small SOT-963 package and optimized for space-constrained portable electronics. Measuring 1.0 mm x 1.0 mm, the SOT-963 offers 30 percent smaller mount area than comparable MOSFET solutions offered in a single SOT-723 package and a 60 percent smaller footprint than SOT-563 devices. With a low vertical clearance of 0.5 mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultra-thin handheld portable devices.

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Zetex Semiconductors has announced its first MOSFET to be packaged in the leadless 2mm x 2mm DFN package. With a PCB footprint 50% smaller than industry standard SOT23 packaged devices and an off-board height of just 0.85mm, the ZXMN2F34MA will benefit a range of space-starved switching and power management applications, such as external switches in buck/boost PoL converters, where PCB footprint, thermal performance and low threshold voltage are of prime importance.

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SOT883 MOSFETs deliver smaller, slimmer, faster, green technology for portable devices

NXP Semiconductors, the independent company founded by Philips, today announced a new range of small signal MOSFET devices housed in one of the world's smallest packages, the SOT883. Boasting an ultra-small 1.0 x 0.6 mm footprint, NXP's SOT883 MOSFETs deliver power dissipation and performance comparable to SOT23, while occupying only 14 percent of the printed circuit board space. Designed for use in a broad range of applications including DC/DC converter modules, power supplies for LCD TV and load switching for mobile phones and other portable devices, the SOT883 MOSFETs ultra-small footprint, extremely low 0.5 mm profile and best-in-class switching speed and very low Rds(on) enable manufacturers to meet consumer demand for more compact and power-efficient products.

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