rf power transistor

Infineon Technologies announced a new family of RF power transistors specifically targeted at wireless infrastructure applications in the 700 MHz frequency band. This band will be used in the U.S. to introduce 4G (fourth-generation) cellular, mobile TV broadcast and other mobile broadband-based services, including LTE (Long Term Evolution), the next-generation wireless network standard. Extending Infineon's broad portfolio of RF power transistors, the new family includes a 55 W driver and two output stage transistors (170 W and 240 W), offering the industry's highest peak power in the 700 MHz band.

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Infineon Technologies announced a new family of RF power transistors in an innovative open-cavity plastic package with a copper base. The new EPOC (Enhanced Plastic Open-Cavity) pack-age offers a 12 percent improvement in thermal resistance – compared to existing solutions – due to the better thermal conductivity of copper, allowing superior thermal and RF performance that are similar to traditional ceramic packages, but at a lower total cost and with improved reliability. With its EPOC package, thin-die and proprietary die-attach technologies, Infineon achieves the best thermal performance with high reliability and consistency for a high-volume cellular infrastructure market.

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50 V LDMOS device designed to enable significant system-level power and cost savings for TV transmitters

LAS VEGAS (National Association of Broadcasters Show) April 14, 2008 Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.

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