schottky diode
Vishay Releases Industry-First Gen. 5.0 High-Performance 45-V Schottky Diodes
Submitted by Ionela on Mon, 07/14/2008 - 14:48.
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Vishay Intertechnology, Inc.launched two new Gen. 5.0 High-Performance 45-V Schottky diodes that are the industry’s first such devices to offer maximum junction temperature to +175 °C. Built on sub-micron trench technology, the 30CTT045 and 60CPT045 devices offer extremely low forward voltage drop and low reverse leakage, allowing designers to increase power density in automotive and other high-temperature applications. |
Vishay Releases 5th Generation Family of High-Performance 100-V Schottky Diodes
Submitted by Ionela on Fri, 03/28/2008 - 08:38.
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MALVERN, PENNSYLVANIA Jan. 30, 2008 Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new high-performance Schottky Diode Gen 5.0 silicon platform with eight new devices offering low forward voltage drop, low reverse leakage, and a high maximum junction temperature for high-temperature applications. |
Fairchild Semiconductor's Schottky Diodes Extend Battery Life and Save Space in Portable Applications
Submitted by Ionela on Thu, 03/27/2008 - 08:07.
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Schottky Diodes in SOD923 Packaging are 50 Percent Smaller than Diodes Packaged in SOD523 San Jose, California March 26, 2008 Fairchild Semiconductor (NYSE: FCS) introduces a series of Schottky diodes that are energy and space efficient, addressing the needs of space-constrained, power-hungry portable applications. The BAS70SL, BAS40SL, and RB751SL feature an extremely low forward drop (VF) of 0.37mV, which is instrumental in extending battery life. Power conservation is a critical design benefit for power-rich functionalities in portable applications such as cell phones, PDAs and digital cameras. |
