transistor

Fujitsu Limited and Fujitsu Laboratories Ltd. announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave transmissions, frequency ranges for which usage is expected to grow. In a technological first, a novel transistor structure was developed that achieves high output of over 100 watts and enables power to be cut when the transistor is in standby mode.

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ON Semiconductor, a global leader of efficient power semiconductor solutions, has announced the expansion of its discrete packaging portfolio with new micro-packaged transistors and diodes. The new additions broaden the company's micro-packaged portfolio of transistors and diodes targeted to meet the needs of today's most demanding space-constrained portable applications.

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The FJD5555 and FJD5553's Saturation Voltage is the Lowest in the Industry

San Jose, California April 1, 2008 Fairchild Semiconductor's (NYSE: FCS) 3A and 5A bipolar junction transistors (BJT) contribute to energy-savings in electronic ballast, power supply and industrial designs due to their ultra-fast switching speeds and low saturation voltage. The FJD5555's saturation voltage is as low as 0.5V and the FJD5553 is as low as 0.23V which is 50 percent lower than industry alternatives. The combination of low saturation voltage and high switching speed positively contributes to overall efficiency. Both the FDJ5555 and the FDJ5553 feature a high breakdown voltage (1050V), which is particularly important for lighting applications that need a wide safe operating area. These transistors are packaged in ultra-compact DPAK packaging (64mm2) to conserve space in electronic ballast and power supply designs.

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